2sd2115(l)/(s) silicon npn epitaxial planar application low frequency power amplifier outline 4 1 2 3 4 3 2 1 1. base
2. collector
3. emitter
4. collector dpak s type l type absolute maximum ratings (ta = 25c) item symbol rating unit collector to base voltage v cbo 150 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 5v collector current i c 2a collector peak current i c(peak) 2.5 a collector power dissipation p c * 1 18 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c.
2sd2115(l)/(s) 2 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 150 v i c = 1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo 60 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 5vi e = 1 ma, i c = 0 collector cutoff current i cbo 10av cb = 100 v, i e = 0 dc current transfer ratio h fe 150 v ce = 5 v, i c = 1.5 a* 1 collector to emitter saturation voltage v ce(sat) 0.8 v i c = 1.5 a, i b = 0.05 a* 1 base to emitter saturation voltage v be(sat) 1.3 v i c = 1.5 a, i b = 0.05 a* 1 fall time t f 0.6 s i c = 1.5 a, i b1 = Ci b2 = 50 ma note: 1. pulse test. maximum collector dissipation curve 30 20 10 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) 3.0 0.3 1.0 collector current i c (a) 0.1 0.03 110 3 30 100 collector to emitter voltage v ce (v) ta = 25 c,
1 shot pulse i c(peak) i c(max) pw = 10 ms 1 ms area of safe operation dc operation (t c = 25 c)
2sd2115(l)/(s) 3 t c = 25 c i b = 0 1.0 0.8 0.6 0.4 0.2 0 collector current i c (a) 2 collector to emitter voltage v ce (v) 6 410 8 typical output characteristics 0.5 ma 1 1.5 2 2.5 3.5 4.5 4 3 5 1,000 300 30 100 10 0.03 0.1 dc current transfer ratio h fe 0.3 collector current i c (a) 1.0 3.0 v ce = 5 v
ta = 25 c dc current transfer ratio
vs. collector current
2sd2115(l)/(s) 4 collector to emitter saturation voltage
vs. base current 10 3.0 1.0 collector to emitter saturation voltage v ce(sat) (v) 0.3 0.1 2 10 30 100 200 base current i b (ma) ta = 25 c i c = 2 a 1.5 a 1 a saturation voltage
vs. collector current 10 3 1.0 collector to emitter saturation voltage v ce(sat) (v)
base to emitter saturation voltage v be(sat) (v) 0.3 0.1 0.03 0.01 0.03 0.1 1.0 collector current i c (a) 0.3 3.0 v be(sat) v ce(sat) i c = 20 i b
ta = 25 c
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